Source:
NatureThe memristor might provide a new path onwards and downwards to ever-greater processor density. By fabricating a cross-bar latch, consisting of one signal line crossed by two control lines5, using (two-terminal) memristors, the function of a (three-terminal) transistor can be achieved with different physics. The two-terminal device is likely to be smaller and more easily addressable than the three-terminal one, and more amenable to three-dimensional circuit architectures. That could make memristors useful for ultra-dense, non-volatile memory devices.
For memristor memory devices to become reality, and to be readily scaled downwards, the efficient and reliable design and fabrication of electrode contacts, interconnects and the active region of the memristor must be assured. In addition, because (unlike with transistors) signal gain is not possible with a memristor, work needs to be put into obtaining high resistance ratios between the ON and OFF states. In all these instances, a deeper understanding of the memristor's dynamic nature is necessary.
It is often the simple ideas that stand the test of time. But even to consider an alternative to the transistor is anathema to many device engineers, and the memristor concept will have a steep slope to climb towards acceptance. Some will undoubtedly trivialize the realization of this ubiquitous nanoscale concept, whereas others will embrace it only after the demonstration of a well-functioning, large-scale array of these densely packed devices. When that happens, the race towards smaller devices will proceed at full steam.
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http://www.nature.com/nature/journal/v453/n7191/pdf/453042a.pdf
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